PART |
Description |
Maker |
BLM8G0710S-45AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
BLM7G1822S-40PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
BLM7G1822S-20PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
MW5IC970GNBR1 MW5IC970NBR1 MW5IC970NBR108 |
RF LDMOS Wideband 2-Stage Power Amplifiers
|
Freescale Semiconductor, Inc
|
MW5IC970NBR1 |
RF LDMOS Wideband 2-Stage Power Amplifiers
|
FREESCALE[Freescale Semiconductor, Inc]
|
CGY93P |
GSM 2 stage Power Amplifier MMIC
|
Infineon
|
CGY21 Q68000-A5953 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
MW4IC001MR4 MW4IC001MR406 |
RF LDMOS Wideband Integrated Power Amplifier 800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc MOTOROLA
|